FQD12P10TM
MOSFET P-CH 100V 9.4A TO252
part Number：
FQD12P10TM
Alternative Model：
FDS3692,VS-10MQ060NTRPBF,PDS3100-13
manufacturer：
Sanyo Semiconductor/onsemi
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 100V 9.4A TO252
RoHS：
NO
FQD12P10TM specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Vgs (Max)：
±30V
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id：
4V @ 250µA
Supplier Device Package：
TO-252AA
Input Capacitance (Ciss) (Max) @ Vds：
800 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C：
9.4A (Tc)
Power Dissipation (Max)：
2.5W (Ta), 50W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
27 nC @ 10 V
Rds On (Max) @ Id, Vgs：
290mOhm @ 4.7A, 10V
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