IPD230N06NGBTMA1
MOSFET N-CH 60V 30A TO252-3
IPD230N06NGBTMA1 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs：
31 nC @ 10 V
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id：
4V @ 50µA
Current - Continuous Drain (Id) @ 25°C：
30A (Tc)
Power Dissipation (Max)：
100W (Tc)
Supplier Device Package：
PG-TO252-3
Input Capacitance (Ciss) (Max) @ Vds：
1100 pF @ 30 V
Rds On (Max) @ Id, Vgs：
23mOhm @ 30A, 10V
