IPD350N06LGBTMA1
MOSFET N-CH 60V 29A TO252-3
IPD350N06LGBTMA1 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Power Dissipation (Max)：
68W (Tc)
Supplier Device Package：
PG-TO252-3
Current - Continuous Drain (Id) @ 25°C：
29A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
13 nC @ 5 V
Rds On (Max) @ Id, Vgs：
35mOhm @ 29A, 10V
Vgs(th) (Max) @ Id：
2V @ 28µA
Input Capacitance (Ciss) (Max) @ Vds：
800 pF @ 30 V
