IPD640N06LGBTMA1
MOSFET N-CH 60V 18A TO252-3
IPD640N06LGBTMA1 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs：
13 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
18A (Tc)
Supplier Device Package：
PG-TO252-3
Power Dissipation (Max)：
47W (Tc)
Vgs(th) (Max) @ Id：
2V @ 16µA
Rds On (Max) @ Id, Vgs：
64mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
470 pF @ 30 V
