IPF09N03LA G
MOSFET N-CH 25V 50A TO252-3
IPF09N03LA G Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss)：
25 V
Current - Continuous Drain (Id) @ 25°C：
50A (Tc)
Power Dissipation (Max)：
63W (Tc)
Rds On (Max) @ Id, Vgs：
8.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：
13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds：
1642 pF @ 15 V
Supplier Device Package：
PG-TO252-3-23
