IPI100N06S3L04XK
MOSFET N-CH 55V 100A TO262-3
IPI100N06S3L04XK Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C：
100A (Tc)
Operating Temperature：
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)：
55 V
Package / Case：
TO-262-3 Long Leads, I2PAK, TO-262AA
Drive Voltage (Max Rds On, Min Rds On)：
5V, 10V
Vgs (Max)：
±16V
Supplier Device Package：
PG-TO262-3
Power Dissipation (Max)：
214W (Tc)
Vgs(th) (Max) @ Id：
2.2V @ 150µA
Rds On (Max) @ Id, Vgs：
3.8mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs：
362 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
17270 pF @ 25 V
