IPI60R385CPXKSA1
MOSFET N-CH 650V 9A TO262-3
IPI60R385CPXKSA1 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
650 V
Package / Case：
TO-262-3 Long Leads, I2PAK, TO-262AA
Current - Continuous Drain (Id) @ 25°C：
9A (Tc)
Power Dissipation (Max)：
83W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
22 nC @ 10 V
Supplier Device Package：
PG-TO262-3
Rds On (Max) @ Id, Vgs：
385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id：
3.5V @ 340µA
Input Capacitance (Ciss) (Max) @ Vds：
790 pF @ 100 V
