IPI80N06S3-05
MOSFET N-CH 55V 80A TO262-3
IPI80N06S3-05 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)：
55 V
Package / Case：
TO-262-3 Long Leads, I2PAK, TO-262AA
Current - Continuous Drain (Id) @ 25°C：
80A (Tc)
Supplier Device Package：
PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs：
240 nC @ 10 V
Vgs(th) (Max) @ Id：
4V @ 110µA
Input Capacitance (Ciss) (Max) @ Vds：
10760 pF @ 25 V
Power Dissipation (Max)：
165W (Tc)
Rds On (Max) @ Id, Vgs：
5.4mOhm @ 63A, 10V
