SPB160N04S2L03DTMA1
MOSFET N-CH 40V 160A TO263-7
SPB160N04S2L03DTMA1 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
40 V
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
2V @ 250µA
Power Dissipation (Max)：
300W (Tc)
Package / Case：
TO-263-7, D2PAK (6 Leads + Tab)
Gate Charge (Qg) (Max) @ Vgs：
230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
8000 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C：
160A (Tc)
Supplier Device Package：
PG-TO263-7-3
Rds On (Max) @ Id, Vgs：
2.7mOhm @ 80A, 10V
