SPI10N10
MOSFET N-CH 100V 10.3A TO262-3
SPI10N10 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Power Dissipation (Max)：
50W (Tc)
Package / Case：
TO-262-3 Long Leads, I2PAK, TO-262AA
Current - Continuous Drain (Id) @ 25°C：
10.3A (Tc)
Rds On (Max) @ Id, Vgs：
170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id：
4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs：
19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
426 pF @ 25 V
Supplier Device Package：
PG-TO262-3-1
