FDB8832
MOSFET N-CH 30V 34A/80A TO263AB
FDB8832 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)：
30 V
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id：
3V @ 250µA
Power Dissipation (Max)：
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
11400 pF @ 15 V
Rds On (Max) @ Id, Vgs：
1.9mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs：
265 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
34A (Ta), 80A (Tc)
