FDD6N25TM
MOSFET N-CH 250V 4.4A DPAK
FDD6N25TM Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs (Max)：
±30V
Drain to Source Voltage (Vdss)：
250 V
Vgs(th) (Max) @ Id：
5V @ 250µA
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Power Dissipation (Max)：
50W (Tc)
Supplier Device Package：
TO-252AA
Gate Charge (Qg) (Max) @ Vgs：
6 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
4.4A (Tc)
Rds On (Max) @ Id, Vgs：
1.1Ohm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
250 pF @ 25 V
