FDPF18N50
MOSFET N-CH 500V 18A TO220F
FDPF18N50 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs (Max)：
±30V
Vgs(th) (Max) @ Id：
5V @ 250µA
Package / Case：
TO-220-3 Full Pack
Drain to Source Voltage (Vdss)：
500 V
Supplier Device Package：
TO-220F-3
Current - Continuous Drain (Id) @ 25°C：
18A (Tc)
Power Dissipation (Max)：
38.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
2860 pF @ 25 V
Rds On (Max) @ Id, Vgs：
265mOhm @ 9A, 10V
