2SK2719(F)
MOSFET N-CH 900V 3A TO3P
part Number：
2SK2719(F)
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 900V 3A TO3P
RoHS：
NO
2SK2719(F) specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Package / Case：
TO-3P-3, SC-65-3
Current - Continuous Drain (Id) @ 25°C：
3A (Ta)
Power Dissipation (Max)：
125W (Tc)
Vgs(th) (Max) @ Id：
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：
25 nC @ 10 V
Drain to Source Voltage (Vdss)：
900 V
Input Capacitance (Ciss) (Max) @ Vds：
750 pF @ 25 V
Supplier Device Package：
TO-3P(N)
Rds On (Max) @ Id, Vgs：
4.3Ohm @ 1.5A, 10V
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Standard Pack Quantity：1600
quantity
unit price
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