SI9407BDY-T1-GE3
MOSFET P-CH 60V 4.7A 8SO
part Number:
SI9407BDY-T1-GE3
Alternative Model:
AO4421,SI9407BDY-T1-E3,AO4441,ITS4200SMEOHUMA1,MAX3078EESA+T,DMP6110SSSQ-13,H1102NLT,LTC6752HS5#TRMPBF,TMS320C6713BZDP225,VZ7AL2B1692612,LT3748EMS#PBF,ES07D-GS08,TC4431EOA,DMP6110SSS-13,W25N512GVEIG
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 60V 4.7A 8SO
RoHS:
YES
SI9407BDY-T1-GE3 specifications
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Vgs(th) (Max) @ Id:
3V @ 250µA
Current - Continuous Drain (Id) @ 25°C:
4.7A (Tc)
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
Power Dissipation (Max):
2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 30 V
Rds On (Max) @ Id, Vgs:
120mOhm @ 3.2A, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:21816
quantity
unit price
International prices
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0.5
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0.45
5625
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