SI7110DN-T1-GE3
MOSFET N-CH 20V 13.5A PPAK1212-8
part Number:
SI7110DN-T1-GE3
Alternative Model:
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 20V 13.5A PPAK1212-8
RoHS:
YES
SI7110DN-T1-GE3 specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Power Dissipation (Max):
1.5W (Ta)
Supplier Device Package:
PowerPAK® 1212-8
Package / Case:
PowerPAK® 1212-8
Drain to Source Voltage (Vdss):
20 V
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 4.5 V
Current - Continuous Drain (Id) @ 25°C:
13.5A (Ta)
Rds On (Max) @ Id, Vgs:
5.3mOhm @ 21.1A, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:6900
quantity
unit price
International prices
3000
1.03
3090
6000
0.99
5940
9000
0.97
8730
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