STD2HNK60Z-1
MOSFET N-CH 600V 2A IPAK
part Number：
STD2HNK60Z-1
Alternative Model：
STP10N95K5 , STD2HNK60Z
manufacturer：
STMicroelectronics
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 600V 2A IPAK
RoHS：
YES
STD2HNK60Z-1 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs (Max)：
±30V
Drain to Source Voltage (Vdss)：
600 V
Current - Continuous Drain (Id) @ 25°C：
2A (Tc)
Package / Case：
TO-251-3 Short Leads, IPAK, TO-251AA
Vgs(th) (Max) @ Id：
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：
15 nC @ 10 V
Power Dissipation (Max)：
45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
280 pF @ 25 V
Supplier Device Package：
TO-251 (IPAK)
Rds On (Max) @ Id, Vgs：
4.8Ohm @ 1A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：4654
quantity
unit price
International prices
1
1.58
1.58
75
1.28
96
150
1.01
151.5
525
0.86
451.5
1050
0.69
724.5
2025
0.66
1336.5
5025
0.63
3165.75
10050
0.59
5929.5
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