FDB3652-F085
MOSFET N-CH 100V 9A/61A TO263AB
part Number：
FDB3652-F085
Alternative Model：
FDB3652 , FDB3652
manufacturer：
Sanyo Semiconductor/onsemi
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 9A/61A TO263AB
RoHS：
YES
FDB3652-F085 specifications
Mounting Type：
Surface Mount
Grade：
Automotive
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Operating Temperature：
-55°C ~ 175°C (TJ)
Qualification：
AEC-Q101
Power Dissipation (Max)：
150W (Tc)
Vgs(th) (Max) @ Id：
4V @ 250µA
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs：
53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
2880 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C：
9A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs：
16mOhm @ 61A, 10V
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Standard Pack Quantity：1600
quantity
unit price
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