IPB22N03S4L15ATMA1
MOSFET N-CH 30V 22A TO263-3
part Number：
IPB22N03S4L15ATMA1
Alternative Model：
FDB603AL , PSMN4R3-30BL , 118 , AUIR2085STR , TLE9180D31QKXUMA1 , AUIRB24427STR
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 22A TO263-3
RoHS：
YES
IPB22N03S4L15ATMA1 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)：
30 V
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C：
22A (Tc)
Vgs (Max)：
±16V
Supplier Device Package：
PG-TO263-3-2
Power Dissipation (Max)：
31W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
14 nC @ 10 V
Vgs(th) (Max) @ Id：
2.2V @ 10µA
Input Capacitance (Ciss) (Max) @ Vds：
980 pF @ 25 V
Rds On (Max) @ Id, Vgs：
14.6mOhm @ 22A, 10V
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Standard Pack Quantity：1600
quantity
unit price
International prices
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