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IPD70N10S3L12ATMA1
MOSFET N-CH 100V 70A TO252-3
part Number：
IPD70N10S3L12ATMA1
Alternative Model：
IPD50N10S3L16ATMA1  ,  MAX6504UKN025+T  ,  DMP2045UQ-7  ,  DMT10H010LK3-13  ,  IPD35N10S3L26ATMA1  ,  IQS228B00000000TSR  ,  TPSM5601R5HEXTRDAR  ,  DMN6140LQ-7  ,  DDZX5V1BQ-7  ,  IPD60N10S4L12ATMA1  ,  GS12081-INE3  ,  TLV1805QDBVRQ1  ,  NCV1117ST33T3G  ,  ADM2682EBRIZ  ,  PDTC123ET  ,  215  ,  AUIR2085STR  ,  TLE9180D31QKXUMA1  ,  AUIRB24427STR
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 70A TO252-3
RoHS：
YES
：
IPD70N10S3L12ATMA1     IPD70N10S3L12ATMA1     IPD70N10S3L12ATMA1     IPD70N10S3L12ATMA1    
IPD70N10S3L12ATMA1 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Power Dissipation (Max)：
125W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
77 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
70A (Tc)
Supplier Device Package：
PG-TO252-3-11
Vgs(th) (Max) @ Id：
2.4V @ 83µA
Rds On (Max) @ Id, Vgs：
11.5mOhm @ 70A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
5550 pF @ 25 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：6343
quantity
unit price
International prices
2500
1.19
2975
5000
1.14
5700
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