IPI05CN10N G
MOSFET N-CH 100V 100A TO262-3
part Number：
IPI05CN10N G
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 100A TO262-3
RoHS：
NO
IPI05CN10N G specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Current - Continuous Drain (Id) @ 25°C：
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
4V @ 250µA
Package / Case：
TO-262-3 Long Leads, I2PAK, TO-262AA
Power Dissipation (Max)：
300W (Tc)
Supplier Device Package：
PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs：
181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
12000 pF @ 50 V
Rds On (Max) @ Id, Vgs：
5.4mOhm @ 100A, 10V
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Standard Pack Quantity：1600
quantity
unit price
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