SPP80P06PHXKSA1
MOSFET P-CH 60V 80A TO220-3
part Number:
SPP80P06PHXKSA1
Alternative Model:
IRS2005STRPBF  ,  IRS10752LTRPBF  ,  FQP47P06  ,  SUP90P06-09L-E3  ,  IXTP120P065T  ,  IRF9520PBF  ,  IRF5210PBF  ,  IRF510PBF  ,  IXTP76P10T  ,  G65P06T  ,  OPL562  ,  ECS-250-20-3X-EN-TR  ,  RST 1-BULK  ,  SUP53P06-20-E3  ,  SRF1306-350Y  ,  FQPF47P06  ,  IRFB3206PBF
manufacturer:
IR (Infineon Technologies)
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 60V 80A TO220-3
RoHS:
YES
SPP80P06PHXKSA1 specifications
Mounting Type:
Through Hole
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Package / Case:
TO-220-3
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
P-Channel
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Supplier Device Package:
PG-TO220-3-1
Power Dissipation (Max):
340W (Tc)
Rds On (Max) @ Id, Vgs:
23mOhm @ 64A, 10V
Vgs(th) (Max) @ Id:
4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs:
173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds:
5033 pF @ 25 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:4048
quantity
unit price
International prices
1
4.15
4.15
50
3.29
164.5
100
2.82
282
500
2.51
1255
1000
2.15
2150
2000
2.02
4040
5000
1.94
9700
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