IXTP1R6N100D2
MOSFET N-CH 1000V 1.6A TO220AB
part Number：
IXTP1R6N100D2
Alternative Model：
IXTP08N100D2 , IXTY1R6N100D2 , IXTP3N100D2
manufacturer：
Littelfuse / IXYS RF
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 1000V 1.6A TO220AB
RoHS：
YES
IXTP1R6N100D2 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-220-3
Drain to Source Voltage (Vdss)：
1000 V
Supplier Device Package：
TO-220-3
Power Dissipation (Max)：
100W (Tc)
FET Feature：
Depletion Mode
Gate Charge (Qg) (Max) @ Vgs：
27 nC @ 5 V
Current - Continuous Drain (Id) @ 25°C：
1.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
645 pF @ 25 V
Rds On (Max) @ Id, Vgs：
10Ohm @ 800mA, 0V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
1
3.89
3.89
50
3.08
154
100
2.64
264
500
2.35
1175
1000
2.01
2010
2000
1.89
3780
5000
1.82
9100
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