SI4823DY-T1-GE3
MOSFET P-CH 20V 4.1A 8SO
part Number：
SI4823DY-T1-GE3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 20V 4.1A 8SO
RoHS：
YES
SI4823DY-T1-GE3 specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drive Voltage (Max Rds On, Min Rds On)：
2.5V, 4.5V
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±12V
Gate Charge (Qg) (Max) @ Vgs：
12 nC @ 10 V
Vgs(th) (Max) @ Id：
1.5V @ 250µA
FET Feature：
Schottky Diode (Isolated)
Current - Continuous Drain (Id) @ 25°C：
4.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
660 pF @ 10 V
Rds On (Max) @ Id, Vgs：
108mOhm @ 3.3A, 4.5V
Power Dissipation (Max)：
1.7W (Ta), 2.8W (Tc)
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Standard Pack Quantity：1600
quantity
unit price
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