SI8461DB-T2-E1
MOSFET P-CH 20V 4MICROFOOT
part Number：
SI8461DB-T2-E1
Alternative Model：
CSD25213W10
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 20V 4MICROFOOT
RoHS：
YES
SI8461DB-T2-E1 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±8V
Current - Continuous Drain (Id) @ 25°C：
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：
1.5V, 4.5V
Vgs(th) (Max) @ Id：
1V @ 250µA
Supplier Device Package：
4-Microfoot
Package / Case：
4-XFBGA, CSPBGA
Rds On (Max) @ Id, Vgs：
100mOhm @ 1.5A, 4.5V
Power Dissipation (Max)：
780mW (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs：
24 nC @ 8 V
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Standard Pack Quantity：1600
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