SI1900DL-T1-E3
MOSFET 2N-CH 30V 0.59A SC70-6
part Number:
SI1900DL-T1-E3
Alternative Model:
FDG6303N  ,  SIA906EDJ-T1-GE3  ,  FDG8850NZ  ,  MCP619T-I/ST  ,  BSS84LT1G  ,  SI2303CDS-T1-E3  ,  DMN3190LDW-7  ,  MCP2021AT-330E/MD
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >
describe:
MOSFET 2N-CH 30V 0.59A SC70-6
RoHS:
YES
SI1900DL-T1-E3 specifications
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
SC-70-6
Technology:
MOSFET (Metal Oxide)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id:
3V @ 250µA
Configuration:
2 N-Channel (Dual)
Power - Max:
270mW
Gate Charge (Qg) (Max) @ Vgs:
1.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C:
590mA
Rds On (Max) @ Id, Vgs:
480mOhm @ 590mA, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:30330
quantity
unit price
International prices
3000
0.21
630
6000
0.2
1200
9000
0.19
1710
30000
0.19
5700
Kind reminder => Please fill out the form below. We will contact you as soon as possible.
corporate name:
Entercorporate name
Name:
EnterName
phone:
Enterphone
email:
Enteremail
quantity:
Enterquantity
describe:
Enterdescribe
Verification code:
Please enter the verification code