SIA445EDJ-T1-GE3
MOSFET P-CH 20V 12A PPAK SC70-6
part Number：
SIA445EDJ-T1-GE3
Alternative Model：
PMCPB5530X,115,ZVN4106FTA,PSA-5453+,PRTR5V0U2X,215,EZA-EG1N50AC,STS234050UL30,LTST-C190GKT,P822601,NCU18XH103F6SRB,NCP45541IMNTWG-H,ECS-.327-12.5-17X-TR,SKY13351-378LF,BQ25629RYKR,640456-2,1042391430
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 20V 12A PPAK SC70-6
RoHS：
YES
SIA445EDJ-T1-GE3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Current - Continuous Drain (Id) @ 25°C：
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：
2.5V, 4.5V
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±12V
Vgs(th) (Max) @ Id：
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
72 nC @ 10 V
Package / Case：
PowerPAK® SC-70-6
Power Dissipation (Max)：
3.5W (Ta), 19W (Tc)
Supplier Device Package：
PowerPAK® SC-70-6
Rds On (Max) @ Id, Vgs：
16.5mOhm @ 7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
2130 pF @ 10 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：7600
quantity
unit price
International prices
3000
0.25
750
6000
0.24
1440
9000
0.22
1980
30000
0.22
6600
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