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PMDPB58UPE,115
MOSFET 2P-CH 20V 3.6A 6HUSON
part Number：
PMDPB58UPE,115
Alternative Model：
NINA-B416-00B,SSM6P47NU,LF,FDMA6023PZT,PMDPB70XPE,115,TLV751180330PDSQR,AOSS32136C,DMP3085LSD-13,PMDPB55XP,115,F33B-1A7Q1-E8C08,LTC3553EUD#PBF,EFM8LB12F64E-C-QFN24,SSM6P69NU,LF,DMP2065UFDB-7,74AUP1G06FW4-7,ICM-20948
manufacturer：
Nexperia
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >
describe：
MOSFET 2P-CH 20V 3.6A 6HUSON
RoHS：
YES
：
PMDPB58UPE,115     PMDPB58UPE,115     PMDPB58UPE,115     PMDPB58UPE,115    
PMDPB58UPE,115 specifications
Mounting Type：
Surface Mount
Package / Case：
6-UFDFN Exposed Pad
Technology：
MOSFET (Metal Oxide)
FET Feature：
Logic Level Gate
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
20V
Configuration：
2 P-Channel (Dual)
Vgs(th) (Max) @ Id：
950mV @ 250µA
Supplier Device Package：
6-HUSON (2x2)
Current - Continuous Drain (Id) @ 25°C：
3.6A
Gate Charge (Qg) (Max) @ Vgs：
9.5nC @ 4.5V
Power - Max：
515mW
Rds On (Max) @ Id, Vgs：
67mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
804pF @ 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：11501
quantity
unit price
International prices
3000
0.15
450
6000
0.14
840
9000
0.13
1170
30000
0.13
3900
75000
0.13
9750
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