SI4101DY-T1-GE3
MOSFET P-CH 30V 25.7A 8SO
part Number:
SI4101DY-T1-GE3
Alternative Model:
SI4143DY-T1-GE3,155060VS75300,LMC555CMM,DZDH0401DW-7,PESD3V3S2UT,215,DMP3036SSS-13,IRF9317TRPBF,1.5SMBJ30CA,FDS6681Z,742792030,IS25LP128F-JBLA3,SBRD10200,AP2114HA-3.3TRG1,SI4435FDY-T1-GE3,CDSOD323-T03S
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 30V 25.7A 8SO
RoHS:
YES
SI4101DY-T1-GE3 specifications
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
FET Type:
P-Channel
Drain to Source Voltage (Vdss):
30 V
Rds On (Max) @ Id, Vgs:
6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C:
25.7A (Tc)
Gate Charge (Qg) (Max) @ Vgs:
203 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds:
8190 pF @ 15 V
Power Dissipation (Max):
6W (Tc)
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:11140
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