STB33N60M2
MOSFET N-CH 600V 26A D2PAK
part Number:
STB33N60M2
Alternative Model:
A767KN336M1JLAE042  ,  1N4148W  ,  TCJB106M035R0200  ,  3220-10-0300-00  ,  5745076-3  ,  PEC02SAAN
manufacturer:
STMicroelectronics
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 600V 26A D2PAK
RoHS:
YES
STB33N60M2 specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
10V
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-263 (D2PAK)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Power Dissipation (Max):
190W (Tc)
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Gate Charge (Qg) (Max) @ Vgs:
45.5 nC @ 10 V
Rds On (Max) @ Id, Vgs:
125mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
1781 pF @ 100 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
quantity
unit price
International prices
1000
2.54
2540
2000
2.39
4780
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