FDS6689S
MOSFET N-CH 30V 16A 8SOIC
FDS6689S specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
30 V
Power Dissipation (Max)：
2.5W (Ta)
Current - Continuous Drain (Id) @ 25°C：
16A (Ta)
Gate Charge (Qg) (Max) @ Vgs：
78 nC @ 10 V
Vgs(th) (Max) @ Id：
3V @ 1mA
Rds On (Max) @ Id, Vgs：
5.4mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
3290 pF @ 15 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
2500
0.61
1525
5000
0.58
2900
12500
0.55
6875
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