1mH SMD Inductor Specs: Measured DCR, Isat, Irms Benchmarks
2026-01-31 11:42:06

Comprehensive bench testing and datasheet collation of common 1 mH SMD components reveal significant performance variances. This guide provides practical benchmarks and reproducible test methodologies for reliable selection in power and filtering applications.

Bench evidence presented here is derived from controlled measurements and aggregated datasheet interpretation. We provide measurable DCR at 25°C, pulsed Isat definitions, and thermal Irms verification to ensure conservative, reliable PCB assembly designs.

Background: Why 1 mH SMD Inductor Specs Vary

1mH SMD Inductor Specs Benchmarking

Construction Types and Electrical Consequences

Construction directly dictates electrical behavior. Wirewound, multilayer, ferrite-core, shielded, and unshielded SMD styles exhibit distinct DCR, Isat, and Irms clusters:

  • Wirewound: Larger-core parts typically yield low DCR (
  • Multilayer: Compact chip inductors often show higher DCR (> 1 Ω) and lower current ratings, ideal for space-constrained filtering.

Datasheet Terminology Decoded

Manufacturer definitions are rarely uniform. Isat is often defined at different inductance drop thresholds (10% vs. 20%), while Irms is tied to specific thermal criteria (e.g., ΔT = 40°C). Always record the exact criterion used during component qualification.

Measured Benchmarks: Typical Distribution

The following charts represent the typical distribution of measured parameters across various 1 mH SMD inductor form factors.

DCR Range Distribution (Ohms)

Power:
Standard: 0.2Ω - 1Ω
Filter: > 1Ω

Measured bench suites show DCR commonly spans from ~0.03 Ω up to several Ω.

Current Capability (mA)

Signal:
Mid-Range: 100mA - 500mA
High: Up to 1A

Saturation current (Isat) and Irms are strongly correlated with physical volume and DCR.

Measurement Methodology

Accurate DCR Testing

Use a four-wire Kelvin technique to eliminate lead resistance error. Thermally stabilize samples at 25°C. For statistically significant data, test at least 5 samples and report the mean ± standard deviation.

Isat & Irms Verification

Measure Isat using short pulses ( to capture L vs. DC bias without self-heating. For Irms, apply continuous current until reaching a steady-state ΔT (usually 40°C) via thermal imaging.

Application-Based Spec Targets

Application Inductance DCR Target Isat Target Irms Target Footprint / Notes
Signal Filtering 1 mH > 1 Ω 20–100 mA 20–200 mA Multilayer, Compact
Small-Power 1 mH 0.2–1 Ω 100–300 mA 100–500 mA Shielded Chip/Molded
Moderate-Power 1 mH 300 mA–1 A 300–900 mA Wirewound, Larger

Summary & Design Checklist

  • Measured DCR for 1 mH parts varies by orders of magnitude; always prioritize Wirewound for low-loss power needs.
  • Verify Isat definitions (10% vs 20% drop) before comparing different manufacturers.
  • Apply thermal derating: Limit continuous currents to 70–80% of tested Irms for long-term reliability.
  • Ensure PCB layout includes solid copper pours and thermal vias to manage heat spreading from high-current chokes.

Frequently Asked Questions

How should I report measured DCR for a 1 mH part?
Report DCR using a four-wire measurement at 25°C. Include the mean and standard deviation across at least five samples, and specify whether the inductor was measured loose or soldered to a test board.
What is the best practice to determine Isat without thermal bias?
Use short current pulses (
How do I validate Irms for continuous operation?
Mount the sample on a standard PCB and apply a steady-state current until the temperature rise (ΔT) stabilizes at 40°C. This measured current serves as your Irms reference point for the specific layout.