Comprehensive bench testing and datasheet collation of common 1 mH SMD components reveal significant performance variances. This guide provides practical benchmarks and reproducible test methodologies for reliable selection in power and filtering applications.
Bench evidence presented here is derived from controlled measurements and aggregated datasheet interpretation. We provide measurable DCR at 25°C, pulsed Isat definitions, and thermal Irms verification to ensure conservative, reliable PCB assembly designs.
Construction directly dictates electrical behavior. Wirewound, multilayer, ferrite-core, shielded, and unshielded SMD styles exhibit distinct DCR, Isat, and Irms clusters:
Manufacturer definitions are rarely uniform. Isat is often defined at different inductance drop thresholds (10% vs. 20%), while Irms is tied to specific thermal criteria (e.g., ΔT = 40°C). Always record the exact criterion used during component qualification.
The following charts represent the typical distribution of measured parameters across various 1 mH SMD inductor form factors.
Use a four-wire Kelvin technique to eliminate lead resistance error. Thermally stabilize samples at 25°C. For statistically significant data, test at least 5 samples and report the mean ± standard deviation.
Measure Isat using short pulses ( to capture L vs. DC bias without self-heating. For Irms, apply continuous current until reaching a steady-state ΔT (usually 40°C) via thermal imaging.
| Application | Inductance | DCR Target | Isat Target | Irms Target | Footprint / Notes |
|---|---|---|---|---|---|
| Signal Filtering | 1 mH | > 1 Ω | 20–100 mA | 20–200 mA | Multilayer, Compact |
| Small-Power | 1 mH | 0.2–1 Ω | 100–300 mA | 100–500 mA | Shielded Chip/Molded |
| Moderate-Power | 1 mH | 300 mA–1 A | 300–900 mA | Wirewound, Larger |




