Executive Summary: The 7847709010 power inductor is engineered for high-current DC‑DC applications. Key specifications include a 1.0 µH nominal inductance, low RDC (10–15 mΩ), and a robust Irms of 9–10 A, supporting reliable operation up to +125°C.
Comparison of key current ratings and loss factors:
Nominal L is a low‑frequency reference; real behavior shifts with frequency and DC bias. For high-accuracy SPICE simulations, model the component as a series L + RDC with parallel parasitic capacitance to account for Self-Resonant Frequency (SRF) effects.
Formula: P_loss ≈ I² × RDC
Ensure Isat ≥ 1.5× expected peak current to maintain linear operation and avoid magnetic saturation during transient loads.
Define load ripple → Compute ΔI ≈ Vin/(L·fsw)·(1-D) → Verify Isat/Irms against ripple peaks.
Minimize switching loop area; place inductor near MOSFET switching node; use solid ground planes.
Perform thermal imaging at max load; verify inductance stability under full DC bias.
Example: For Vin=12V, Vout=3.3V, Iout=8A, fsw=500kHz.
Target ripple ΔI (20-30% of Iout) ≈ 2A.
Check: Is Isat > Peak (8A + 1A = 9A)? If yes, and thermal derating allows 8A Irms, the 7847709010 is a suitable match.
Utilize the 7847709010’s shielded construction. Keep the inductor as close as possible to the switching node to minimize radiated noise. Avoid crossing sensitive signal traces beneath the inductor area.




